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4N25 OPTOISOLATORS TRANSISTOR OUTPUT DIP-6 CASE
The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
infrared emitting diode optically coupled to a monolithic silicon phototransistor
detector.
• Most Economical Optoisolator Choice for Medium Speed, Switching Applications
• Meets or Exceeds All JEDEC Registered Specifications
• To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option
(---------CIL0284)
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CNY70 REFLECTIVE OPTICAL SENSOR WITH TRANSISTOR OUTPUT 5V 1MA
CNY70
Vishay Telefunken
1 (7)
Document Number 83751 www.vishay.com
Rev. A4, 05–Apr–00
Reflective Optical Sensor with Transistor Output
Description
The CNY70 has a compact construction where the
emitting light source and the detector are arranged in
the same direction to sense the presence of an object
by using the reflective IR beam from the object.
The operating wavelength is 950 nm. The detector
consists of a phototransistor.
Applications
Optoelectronic scanning and switching devices
i.e., index sensing, coded disk scanning etc.
(optoelectronic encoder assemblies for
transmission sensing).
Features
Compact construction in center-to-center spacing
of 0.1’
No setting required
High signal output
Low temperature coefficient
Detector provided with optical filter
Current Transfer Ratio (CTR) of typical 5%
94 9320
95 10930
Marking
(---------OPT0139)
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TCST2103 TRANSMISSIVE OPT.SENSOR WITH PHOTOTRANSISTOR OUTPUT WITH 2 MOUNTING FLAGS
(---------OPT0039)
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