MRF151G PO300W PI7.5W 175MHZ 50V 375-04 STYLE 2 CASE

The RF MOSFET Line
RF POWER FIELD-EFFECT TRANSISTOR
N–Channel Enhancement–Mode MOSFET
Designed for broadband commercial AND military applications at frequencies
to 175 MHz. The high power, high gain AND broadband performance of this
device makes possible solid state transmitters for FM broadcast OR TV channel
frequency bands.
• Guaranteed Performance at 175 MHz, 50 V:
Output Power — 300 W
Gain — 14 dB (16 dB Typ)
Efficiency — 50%
• Low Thermal Resistance — 0.35°C/W
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage VDSS 125 Vdc
Drain–Gate Voltage VDGO 125 Vdc
Gate–Source Voltage VGS ±40 Vdc
Drain Current — Continuous ID 40 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 500
2.85
Watts
W/°C
Storage Temperature Range Tstg –65 to +150 °C
Operating Junction Temperature TJ 200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RqJC 0.35 °C/W
NOTE — CAUTION — MOS devices are susceptible to damage FROM electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.