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MRF136 PO15W PI0.38W 225MHZ 28V 211-07 CASE

Código: ---------TRA0318

MRF136 PO15W PI0.38W 225MHZ 28V 211-07 CASE
M/A-COM

MRF136 PO15W PI0.38W 225MHZ 28V 211-07 CASE
The RF MOSFET Line
Designed for wideband large–signal amplifier and oscillator applications up

Marca:M/A-COM

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The RF MOSFET Line

Designed for wideband large–signal amplifier and oscillator applications up to
400 MHz range, in single ended configuration.
• Guaranteed 28 Volt, 150 MHz Performance
Output Power = 15 Watts
Narrowband Gain = 16 dB (Typ)
Efficiency = 60% (Typical)
• Small–Signal and Large–Signal
Characterization
• 100% Tested For Load
Mismatch At All Phase
Angles With 30:1 VSWR
• Excellent Thermal Stability,
Ideally Suited For Class A
Operation
• Facilitates Manual Gain
Control, ALC and
Modulation Techniques
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage VDSS 65 Vdc
Drain–Gate Voltage (RGS = 1.0 MW) VDGR 65 Vdc
Gate–Source Voltage VGS ±40 Vdc
Drain Current — Continuous ID 2.5 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 55
0.314
Watts
W/°C
Storage Temperature Range Tstg –65 to +150 °C
Operating Junction Temperature TJ 200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RqJC 3.2 °C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 
15 W, to 400 MHz
N–CHANNEL
MOS BROADBAND
RF POWER FET
CASE 211–07, STYLE 2
D
G
S
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SEMICONDUCTOR TECHNICAL DATA by MRF136/D
1
REV 7

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IVA no incluido en los precios. | Última Actualización: 12/09/2014 10:30

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