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MMBT5088 NPN GENERAL PURPOSE AMPLIFIER 30V 100MA SOT-23

Código: ---------TRA0700

MMBT5088 NPN GENERAL PURPOSE AMPLIFIER 30V 100MA SOT-23

NPN General Purpose Amplifier This device is designed for low noise, high

Marca:FAIRCHILD

Disponibilidad: ---------



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2N5088 / MMBT5088 / 2N5089 / MMBT5089
2N5088
2N5089
MMBT5088
MMBT5089
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1mA to 50 mA.
Sourced from Process 07.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 2N5088
2N5089
30
25
V
V
VCBO Collector-Base Voltage 2N5088
2N5089
35
30
V
V
VEBO Emitter-Base Voltage 4.5 V
IC Collector Current - Continuous 100 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N5088
2N5089
*MMBT5088
*MMBT5089
PD Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
RqJC Thermal Resistance, Junction to Case 83.3 °C/W
RqJA Thermal Resistance, Junction to Ambient 200 357 °C/W
C
B E
TO-92
C
B
E
SOT-23
Mark: 1Q / 1R
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWER & Signal
Technologies
ã 1997 Fairchild Semiconductor Corporation
2N5088 / MMBT5088 / 2N5089 / MMBT5089
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
ON CHARACTERISTICS
hFE DC Current Gain IC = 100 mA, VCE = 5.0 V 2N5088
2N5089
IC = 1.0 mA, VCE = 5.0 V 2N5088
2N5089
IC = 10 mA, VCE = 5.0 V* 2N5088
2N5089
300
400
350
450
300
400
900
1200
VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.5 V
VBE(on) Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V 0.8 V
SMALL SIGNAL CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 2N5088
2N5089
30
25
V
V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100 mA, IE = 0 2N5088
2N5089
35
30
V
V
ICBO Collector Cutoff Current VCB = 20 V, IE = 0 2N5088
VCB = 15 V, IE = 0 2N5089
50
50
nA
nA
IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0
VEB = 4.5 V, IC = 0
50
100
nA
nA
Spice Model
NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271
Nc=2 Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n
Tf=821.7p Itf=.35 Vtf=4 Xtf=7 Rb=10)
fT Current Gain - Bandwidth Product IC = 500 mA,VCE = 5.0 mA,
f = 20 MHz
50 MHz
Ccb Collector-Base Capacitance VCB = 5.0 V, IE = 0, f = 100 kHz 4.0 pF
Ceb Emitter-Base Capacitance VBE = 0.5 V, IC = 0, f = 100 kHz 10 pF
hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 5.0 V, 2N5088
f = 1.0 kHz 2N5089
350
450
1400
1800
NF Noise Figure IC = 100 mA, VCE = 5.0 V, 2N5088
RS = 10 kW, 2N5089
f = 10 Hz to 15.7 kHz
3.0
2.0
dB
dB
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
NPN General Purpose Amplifier
(continued)

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