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TRANSISTORES -> RADIOFRECUENCIA -> BFR540 NPN 9GHZ 500MW 120MA 20V SOT23 CASE

BFR540 NPN 9GHZ 500MW 120MA 20V SOT23 CASE
PHILIPS

BFR540 NPN 9GHZ 500MW 120MA 20V SOT23 CASE

Código: ---------TRA0629

Product specification
Supersedes data of 1995 September
1999 Aug 23
DISCRETE SEMICONDUCTORS
BFR540
NPN 9 GHz wideband transistor

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Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR540
FEATURES
· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures
excellent reliability.
DESCRIPTION
The BFR540 is an npn silicon planar
epitaxial transistor, intended for
applications in the RF frontend in
wideband applications in the GHz
range, such as analog and digital
cellular telephones, cordless
telephones (CT1, CT2, DECT, etc.),
radar detectors, satellite TV tuners
(SATV), MATV/CATV amplifiers and
repeater amplifiers in fibre-optic
systems.
The transistor is encapsulated in a
plastic SOT23 envelope.
PINNING
PIN DESCRIPTION
Code: N29
1 base
2 emitter
3 collector
Fig.1 SOT23.
fpage
Top view MSB003
1 2
3
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter - - 20 V
VCES collector-emitter voltage RBE = 0 - - 15 V
IC DC collector current - - 120 mA
Ptot total power dissipation up to Ts = 70 °C; note 1 - - 500 mW
hFE DC current gain IC = 40 mA; VCE = 8 V 60 120 250
Cre feedback capacitance IC = ic = 0; VCB = 8 V; f = 1 MHz - 0.6 - pF
fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz - 9 - GHz
GUM maximum unilateral
power gain
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
- 14 - dB
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
- 7 - dB
÷S21ê2 insertion power gain IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
12 13 - dB
F noise figure Gs = Gopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
- 1.3 1.8 dB
Gs = Gopt; IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
- 1.9 2.4 dB
Gs = Gopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
- 2.1 - dB
1999 Aug 23 3
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR540
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 20 V
VCES collector-emitter voltage RBE = 0 - 15 V
VEBO emitter-base voltage open collector - 2.5 V
IC DC collector current - 120 mA
Ptot total power dissipation up to Ts = 70 °C; note 1 - 500 mW
Tstg storage temperature -65 150 °C
Tj junction temperature - 175 °C
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
Rth j-s from junction to soldering point see note 1 260 K/W
1999 Aug 23 4
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR540
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2. IC = 40 mA; VCE = 8 V; RL = 50 W;
Tamb = 25 °C; f = 900 MHz;
fp = 900 MHz; fq = 902 MHz;
measured at f(2p-q) = 898 MHz and f(2q-p) = 904 MHz.
3. dim = -60 dB (DIN 45004B);
Vp = VO; Vq = VO -6 dB; f p = 795.25 MHz;
VR = VO -6 dB; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+q-r) = 793.25 MHz; preliminary data.
SYMBOL PARAMETER
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR540
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.



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